Author Affiliations
Abstract
Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi'dian University, Xi'an 710071, China
The nano-patterned InGaN film was used in green InGaN/GaN multiple quantum wells (MQWs) structure, to relieve the unpleasantly existing mismatch between high indium content InGaN and GaN, as well as to enhance the light output. The different self-assembled nano-masks were formed on InGaN by annealing thin Ni layers of different thicknesses. Whereafter, the InGaN films were etched into nano-patterned films. Compared with the green MQWs structure grown on untreated InGaN film, which on nano-patterned InGaN had better luminous performance. Among them the MQWs performed best when 3 nm thick Ni film was used as mask, because that optimally balanced the effects of nano-patterned InGaN on the crystal quality and the light output.The nano-patterned InGaN film was used in green InGaN/GaN multiple quantum wells (MQWs) structure, to relieve the unpleasantly existing mismatch between high indium content InGaN and GaN, as well as to enhance the light output. The different self-assembled nano-masks were formed on InGaN by annealing thin Ni layers of different thicknesses. Whereafter, the InGaN films were etched into nano-patterned films. Compared with the green MQWs structure grown on untreated InGaN film, which on nano-patterned InGaN had better luminous performance. Among them the MQWs performed best when 3 nm thick Ni film was used as mask, because that optimally balanced the effects of nano-patterned InGaN on the crystal quality and the light output.
GaN InGaN nano-mask nano-patterned MQWs Journal of Semiconductors
2023, 44(4): 042801
江苏大学光子制造科学技术中心, 江苏 镇江 212013
介绍了一种全新的基于飞秒激光局域场加强效应的纳米加工技术,通过使用了微焦级别脉宽为130 fs、波长800 nm的飞秒激光照射于原子力显微镜的探针针尖,利用其局域场加强效应在金薄膜表面加工出各种纳米图形。对加工参数对加工线宽的影响中,我们发现了随着加工能量的减小和加工速度的不断增大将导致加工线宽不断减小,最终达到了极限线宽(～10 nm)。这项技术可以广泛的应用与各种材料的加工中,尤其适合各种金属薄膜的加工,特别是结合了现有的自动化控制系统更是可以加工出任意复杂的二维纳米图形。
飞秒激光 局域场增强 纳米加工 原子力显微镜
